Gallium Oxide And Gadolinium Gallium Oxide Insulators On Si δ-Doped GaAs / AlGaAs Heterostructures

GaAs/AIGaAs quantum well and modulation-doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane

High-quality GaAs/AlGaAs quantum well and modulation-doped heterostructures have been grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using trimethylamine alane (TMAA) as a new aluminum source. TMAA is an alternative to the conventional organometallic precursors and offers the advantage of substantially reduced oxygen and carbon incorporation in AlGaAs. Intense photoluminescenc...

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

ON THE MOBILITY OF GaAs-AlGaAs HETEROSTRUCTURES WITH AN IMPURITY LAYER IN THE GaAs

2 7 N ov 1 99 9 A possible role of D − band in hopping conductivity and metal - insulator transition in 2 D structures

A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D-band). Experimental studies of hopping magnetoresistance for Si δ-doped GaAs/AlGaAs heterostructure give additional evidences for the model.

Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B

We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures TG> 690 C and low As4 fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic ...